bas520-02v document number 85846 rev. 1.3, 05-aug-10 vishay semiconductors www.vishay.com 1 19020 1 2 1 2 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal schottky diode features ? this diode features very low turn-on volt- age and fast switching. ? this device is protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges. ? space saving sod-523 package ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sod-523 molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 260 c/10 s at terminals weight: approx. 1.6 mg packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part ordering code marking remarks bas520-02v BAS520-02V-GS18 or bas520-02v-gs08 t tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm 30 v forward continuous current i f 200 ma power dissipation p tot 200 mw parameter test condition symbol value unit junction soldering point r thjs 100 k/w junction temperature t j 125 c storage temperature range t stg - 55 to +150 c
www.vishay.com 2 document number 85846 rev. 1.3, 05-aug-10 bas520-02v vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c unless otherwise specified parameter test condition symbol min ty p. max unit reverse breakdown voltage i r = 1 a (pulsed) v (br) 30 v leakage current pulse test v r = 30 v, t p < 300 si r 0.5 1 a forward voltage pulse test t p < 300 s, i f = 1.0 ma v f 320 mv pulse test t p < 300 s, i f = 200 ma, v f 600 mv diode capacitance v r = 0 v, f = 1 mhz c d 25 30 pf reverse recovery time i f = 10 ma, i r = 10 ma, i rr = 1 ma, r l = 100 t rr 10 ns figure 1. typical capacitance vs. reverse voltage figure 2. forward current vs. forward voltage 0 5 10 15 20 25 04 8 12 16 20 24 2 8 32 36 1 8 960 v r -re v erse v oltage ( v ) c - diode capacitance ( pf ) d f=1mhz 0 0.1 0.2 0.3 0.4 0.5 0.6 1 8 961 100 10 0.1 0.01 1000 1 v f -for w ard v oltage ( v ) f i-for w ard c u rrent (ma) figure 3. typical reverse voltage vs. reverse current 0 5 10 15 20 25 30 35 40 45 50 0.1 1 10 100 1000 1 8 962 v -re v erse v oltage ( v ) i r -re v erse c u rrent (a) r
bas520-02v document number 85846 rev. 1.3, 05-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): sod-523 foot print recommendation: rev. g - date: 13.april 2010 16864 document no.: s8-v-3880.02-001 (4) 0.4 (0.016) 1.45 (0.057) 0.35 (0.014) 1.3 (0.051) 1.1 (0.043) 0.35 (0.014) 0.18 (0.007) 1.7 (0.067) 1.5 (0.059) 0.2 (0.008) 0.08 (0.003) 0.9 (0.035) 0.7 (0.028) 0.7 (0.028) 0.5 (0.020) max. 0.8
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